Microstructures of Chemical-Vapour-Deposited TiN Films in Tubular Reactor

Raman bands in microwave plasma assisted chemical vapour deposited films

Raman spectroscopy is employed to characterize thin diamond films deposited by microwave plasma assisted chemical vapour deposition technique using a gas mixture of methane and hydrogen. The surface morphology of the films was analyzed by scanning electron microscopy. We have identified submicron crystals on (100) facets of diamond crystals which gave rise to bands in the Raman spectrum centred...

Gettering of interstitial iron in silicon by plasma-enhanced chemical vapour deposited silicon nitride films

Investigations on doping of amorphous and nanocrystalline silicon films deposited by catalytic chemical vapour deposition

Hydrogenated amorphous and nanocrystalline silicon, deposited by catalytic chemical vapour deposition, have been doped during deposition by the addition of diborane and phosphine in the feed gas, with concentrations in the range of 1%. The crystalline fraction, dopant concentration and electrical properties of the films are studied. The nanocrystalline films exhibited a high doping efficiency, ...

Adaptive Control of Tubular Chemical Reactor

In this paper the simulation results of the adaptive control inside the tubular chemical reactor with counter-current cooling in the jacket is shown. The adaptive controller is based on the choice of the External Linear Model as a linear representation of the originally nonlinear system parameters of which are identified recursively. The polynomial method together with spectral factorization an...

Long distance spin communication in chemical vapour deposited graphene

Graphene is an ideal medium for long-distance spin communication in future spintronic technologies. So far, the prospect is limited by the smaller sizes of exfoliated graphene flakes and lower spin transport properties of large-area chemical vapour-deposited (CVD) graphene. Here we demonstrate a high spintronic performance in CVD graphene on SiO2/Si substrate at room temperature. We show pure s...